VQ2001P-2

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

2Ohm

Power Dissipation :

2W

Number of Terminations :

14

Transistor Element Material :

SILICON

Packaging :

Tube

Mount :

Through Hole

JESD-609 Code :

e0

FET Feature :

Standard

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

FET Type :

4 P-Channel

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

30V

Turn On Time-Max (ton) :

30ns

Drain Current-Max (Abs) (ID) :

0.6A

Terminal Finish :

TIN LEAD

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Dual

ECCN Code :

EAR99

Number of Pins :

14

Continuous Drain Current (ID) :

600mA

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Package / Case :

14-DIP

Rds On (Max) @ Id, Vgs :

2 Ω @ 1A, 12V

Number of Elements :

4

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

2A

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Turn Off Time-Max (toff) :

30ns

Feedback Cap-Max (Crss) :

60 pF

Pbfree Code :

No

Max Power Dissipation :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR