VP2110K1-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

12 Ω @ 500mA, 10V

Surface Mount :

yes

Power Dissipation-Max (Abs) :

0.36 W

Series :

--

Radiation Hardening :

No

JEDEC-95 Code :

TO-236AB

Feedback Cap-Max (Crss) :

8 pF

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Lifecycle Status :

Production (Last Updated: 2 years ago)

Gate-Source Voltage (Max) :

±20(V)

Factory Lead Time :

5 Weeks

Current - Continuous Drain (Id) @ 25°C :

120mA Tj

JESD-609 Code :

e3

Pin Count :

3

Terminal Form :

Gull wing

Turn On Delay Time :

4 ns

Height :

950μm

Power Dissipation (Max) :

360mW (Ta)

Published :

2013

Drain to Source Breakdown Voltage :

-100V

Brand :

Microchip Technology / Atmel

Number of Terminals :

3

Package Type :

SOT-23

Manufacturer :

Microchip

Operating Temperature Classification :

Military

DS Breakdown Voltage-Min :

100 V

Number of Pins :

3

Drain-source On Resistance-Max :

12 Ω

Product Category :

MOSFET

Product Type :

MOSFET

Additional Feature :

LOW THRESHOLD

Transistor Application :

SWITCHING

Min Operating Temperature :

-55 °C

Rds On Max :

12 Ω

Transistor Type :

1 P-Channel

Max Power Dissipation :

360 mW

Continuous Drain Current (ID) :

120mA

Power Dissipation :

360mW

Channel Mode :

Enhancement

Operating Mode :

ENHANCEMENT MODE

Product :

MOSFET Small Signal

Weight :

1.437803g

Turn-Off Delay Time :

5 ns

Continuous Drain Current Id :

120

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

TO-236AB (SOT23)

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Maximum Operating Temperature :

+ 150 C

Max Operating Temperature :

150 °C

Contact Plating :

Tin

Rad Hardened :

No

Mounting Style :

SMD/SMT

Configuration :

Single

Fall Time (Typ) :

5 ns

Length :

2.9mm

Mounting :

Surface Mount

FET Type :

P-Channel

RoHS :

Compliant

Terminal Position :

Dual

Polarity :

P

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Product Status :

Active

Power Dissipation-Max :

360mW Ta

Transistor Element Material :

SILICON

Polarity/Channel Type :

P-Channel

Channel Type :

P

HTS Code :

8541.21.00.95

Package Shape :

RECTANGULAR

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn) - annealed

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Number of Channels :

1

FET Feature :

--

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Base Product Number :

VP2110

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Turn-On Delay Time :

4 ns

Width :

1.3mm

JESD-30 Code :

R-PDSO-G3

Operating Temp Range :

-55C to 150C

Drain-Source On-Volt :

100(V)

Type :

Power MOSFET

Rise Time :

5ns

Input Capacitance :

60 pF

Number of Elements :

1

Transistor Polarity :

P-Channel

Continuous Drain Current :

0.12(A)

Drain to Source Resistance :

12 Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)