VP2106N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Minimum Operating Temperature :

-55 °C

Terminal Finish :

Matte Tin (Sn)

Product Type :

MOSFET

Brand :

Microchip Technology / Atmel

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Power Dissipation :

740mW

Feedback Cap-Max (Crss) :

8 pF

Supplier Device Package :

TO-92-3

Gate-Source Voltage (Max) :

±20(V)

Height :

5.33mm

Drain-source On Resistance-Max :

12 Ω

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Turn On Delay Time :

4 ns

Peak Reflow Temperature (Cel) :

Not Applicable

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Base Product Number :

VP2106

Number of Terminals :

3

Package :

Bag

Turn-On Delay Time :

4 ns

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Through Hole

Published :

2006

Manufacturer :

Microchip

Turn-Off Delay Time :

5 ns

DS Breakdown Voltage-Min :

60 V

Surface Mount :

No

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Max Power Dissipation :

1 W

Width :

4.19mm

Number of Channels :

1

Power Dissipation (Max) :

1W (Tc)

Rad Hardened :

No

RoHS :

Compliant

Operating Temperature Classification :

Military

Max Operating Temperature :

150 °C

Contact Plating :

Tin

MSL :

-

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

0.25A

Lifecycle Status :

Production (Last Updated: 2 years ago)

Rise Time :

5ns

FET Type :

P-Channel

JESD-30 Code :

O-PBCY-T3

JESD-609 Code :

e3

Additional Feature :

HIGH INPUT IMPEDANCE

Drain to Source Breakdown Voltage :

-60V

JEDEC-95 Code :

TO-92

Product Status :

Active

Vgs(th) (Max) @ Id :

3.5V @ 1mA

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Elements per Chip :

1

Series :

-

Mounting Style :

Through Hole

Rds On Max :

12 Ω

Maximum Operating Temperature :

+150 °C

Packaging :

Bulk

Input Capacitance :

60 pF

Power Dissipation-Max :

1W Tc

Continuous Drain Current (ID) :

250mA

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

250mA Tj

Terminal Position :

BOTTOM

Continuous Drain Current :

0.25(A)

HTS Code :

8541.21.00.95

Mounting :

Through Hole

Polarity :

P

Subcategory :

MOSFETs

Package Type :

TO-92

Transistor Type :

1 P-Channel

Continuous Drain Current Id :

250

Type :

Power MOSFET

RoHS Status :

ROHS3 Compliant

Length :

5.21mm

Schedule B :

8541210080, 8541210080/8541210080, 8541210080/8541210080/8541210080, 8541210080/8541210080/8541210080/8541210080

Drain to Source Resistance :

12 Ω

Product :

MOSFET Small Signal

Fall Time (Typ) :

5 ns

Qualification :

-

Min Operating Temperature :

-55 °C

Transistor Polarity :

P-Channel

Drain-Source On-Volt :

60(V)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Temp Range :

-55C to 150C

Power Dissipation-Max (Abs) :

1 W

Polarity/Channel Type :

P-Channel

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

12 Ω @ 500mA, 10V

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Number of Terminations :

3

Weight :

453.59237mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Package Shape :

Round

Reach Compliance Code :

Compliant

Element Configuration :

Single

Product Category :

MOSFET

Channel Type :

P