VP0808B-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2000

Turn On Delay Time :

11 ns

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

-3A

Current Rating :

-280mA

Fall Time (Typ) :

20 ns

Package / Case :

TO-205AD, TO-39-3 Metal Can

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

0.88A

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Packaging :

Tube

Feedback Cap-Max (Crss) :

25 pF

Number of Elements :

1

Terminal Form :

Wire

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Power Dissipation-Max :

6.25W Ta

Turn-Off Delay Time :

20 ns

Element Configuration :

Single

Vgs (Max) :

±20V

Width :

8.15mm

Pin Count :

2

Terminal Position :

BOTTOM

Number of Channels :

1

JESD-609 Code :

e3

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

80V

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

-80V

Rds On (Max) @ Id, Vgs :

5 Ω @ 1A, 10V

Transistor Application :

SWITCHING

Height :

6.6mm

Factory Lead Time :

9 Weeks

Current - Continuous Drain (Id) @ 25°C :

880mA Ta

ECCN Code :

EAR99

Length :

9.4mm

Rise Time :

30ns

Drain-source On Resistance-Max :

5Ohm

Number of Pins :

3

Vgs(th) (Max) @ Id :

4.5V @ 1mA