VP0808B-2

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

5Ohm

Turn-Off Delay Time :

20 ns

Feedback Cap-Max (Crss) :

25 pF

Turn Off Time-Max (toff) :

60ns

Turn On Delay Time :

11 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

880mA

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

10V

HTS Code :

8541.29.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

6.25W Ta

Terminal Form :

Wire

Package / Case :

TO-205AD, TO-39-3 Metal Can

DS Breakdown Voltage-Min :

80V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Turn On Time-Max (ton) :

55ns

Published :

2000

Packaging :

Tube

Transistor Element Material :

SILICON

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

5 Ω @ 1A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

0.88A

Current - Continuous Drain (Id) @ 25°C :

880mA Ta

Number of Pins :

3

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

80V

Fall Time (Typ) :

20 ns

Number of Terminations :

3

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

3A

Rise Time :

30ns