VN2222LL
- Mfr.Part #
- VN2222LL
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 150MA TO92-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 0.4 W
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Packaging :
- Bulk
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- MSL :
- -
- FET Feature :
- -
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Package Shape :
- Round
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Terminal Form :
- THROUGH-HOLE
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 3
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-92
- Polarity :
- N
- Additional Feature :
- LOW THRESHOLD
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Power Dissipation-Max :
- 400mW Ta 1W Tc
- Product Category :
- MOSFET
- Drain-source On Resistance-Max :
- 7.5 Ω
- Mounting :
- Through Hole
- DS Breakdown Voltage-Min :
- 60 V
- JESD-30 Code :
- O-PBCY-T3
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- BOTTOM
- Continuous Drain Current Id :
- 230mA
- Channel Mode :
- Enhancement
- Turn On Delay Time :
- 10 ns
- Power Dissipation (Max) :
- 400mW (Ta), 1W (Tc)
- Gate-Source Voltage (Max) :
- ±30(V)
- ECCN Code :
- EAR99
- Package Type :
- TO-92
- Configuration :
- Single
- Operating Temp Range :
- -55C to 150C
- Transistor Polarity :
- N-Channel
- Type :
- Power MOSFET
- Continuous Drain Current :
- 0.23(A)
- Weight :
- 453.59237mg
- Drain-Source On-Volt :
- 60(V)
- Mounting Style :
- Through Hole
- Manufacturer :
- Microchip
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 60 V
- Package :
- Bag
- Product Type :
- MOSFET
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Rad Hardened :
- No
- Series :
- -
- Qualification :
- -
- Element Configuration :
- Single
- Number of Channels :
- 1
- Vgs (Max) :
- ±30V
- Radiation Hardening :
- No
- Power Dissipation :
- 1W
- Height :
- 5.33mm
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- Feedback Cap-Max (Crss) :
- 8 pF
- Gate to Source Voltage (Vgs) :
- 30V
- Base Product Number :
- VN2222
- Brand :
- Microchip Technology / Atmel
- Maximum Operating Temperature :
- +150 °C
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 10 ns
- Length :
- 5.21mm
- Width :
- 4.19mm
- Channel Type :
- N Channel
- Operating Temperature Classification :
- Military
- RoHS :
- Details
- Minimum Operating Temperature :
- -55 °C
- Drain Current-Max (Abs) (ID) :
- 0.099A
- Number of Elements per Chip :
- 1
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 230mA
- Current - Continuous Drain (Id) @ 25°C :
- 230mA Tj
- Supplier Device Package :
- TO-92-3
- Drain to Source Breakdown Voltage :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- Published :
- 2006
- Reach Compliance Code :
- Compliant
- Datasheets
- VN2222LL

N-Channel Bulk 7.5 Ω @ 500mA, 10V ±30V 60pF @ 25V 60 V TO-226-3, TO-92-3 (TO-226AA)
VN2222LL-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 60pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 230mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.099A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 60 V.For this transistor to work, a voltage 60 V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
VN2222LL-G Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
a 60 V drain to source voltage (Vdss)
VN2222LL-G Applications
There are a lot of Microchip Technology
VN2222LL-G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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