VN2210N2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Feedback Cap-Max (Crss) :

65 pF

Terminal Position :

BOTTOM

Length :

9.4mm

Number of Terminals :

3

Polarity :

N

Qualification Status :

Not Qualified

Number of Channels :

1

Drain-Source On-Volt :

100(V)

JEDEC-95 Code :

TO-39

Base Product Number :

VN2210

Operating Temp Range :

-55C to 150C

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

350m Ω @ 4A, 10V

Maximum Operating Temperature :

+ 150 C

ECCN Code :

EAR99

Published :

2011

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package Shape :

Round

Transistor Application :

SWITCHING

Surface Mount :

No

RoHS :

N

FET Type :

N-Channel

Brand :

Microchip Technology / Atmel

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Case Connection :

DRAIN

Manufacturer :

Microchip

Power Dissipation :

6W

Current - Continuous Drain (Id) @ 25°C :

1.7A Tj

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Mode :

Enhancement

Power Dissipation-Max :

360mW Tc

Mounting Style :

Through Hole

Number of Pins :

3

Packaging :

Bulk

Rise Time :

10ns

Fall Time (Typ) :

30 ns

Terminal Finish :

NICKEL GOLD

Number of Elements :

1

Product Category :

MOSFET

Transistor Element Material :

SILICON

JESD-609 Code :

e4

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

FET Feature :

-

Drain to Source Voltage (Vdss) :

100 V

Turn On Delay Time :

10 ns

Rad Hardened :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-205AD, TO-39-3 Metal Can

Element Configuration :

Single

Additional Feature :

HIGH INPUT IMPEDANCE

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Operating Temperature Classification :

Military

Width :

9.4mm

Drain-source On Resistance-Max :

0.35 Ω

Supplier Device Package :

TO-39

Continuous Drain Current (ID) :

1.7A

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

Package :

Bag

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Mounting :

Through Hole

JESD-30 Code :

O-MBCY-W3

Package Type :

TO-39

Continuous Drain Current :

1.7(A)

Configuration :

Single

Transistor Type :

1 N-Channel

Series :

-

Power Dissipation-Max (Abs) :

6 W

RoHS Status :

Non-RoHS Compliant

Power Dissipation (Max) :

360mW (Tc)

Terminal Form :

Wire

Pin Count :

3

Vgs(th) (Max) @ Id :

2.4V @ 10mA

Turn-Off Delay Time :

50 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Minimum Operating Temperature :

- 55 C

Height :

6.6mm

Type :

Power MOSFET

DS Breakdown Voltage-Min :

100 V

Reach Compliance Code :

Compliant

Gate-Source Voltage (Max) :

±20(V)

Product Status :

Active

Product Type :

MOSFET