VN10LPSTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

7.5Ohm

Power Dissipation-Max :

625mW Ta

Number of Elements :

1

Height :

4.01mm

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Lead Free :

Lead Free

Published :

2012

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Drain to Source Breakdown Voltage :

60V

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Number of Terminations :

3

REACH SVHC :

No SVHC

Power Dissipation :

625mW

Package / Case :

E-Line-3, Formed Leads

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

JESD-30 Code :

R-PSIP-W3

Mount :

Surface Mount, Through Hole

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.27A

Pin Count :

3

Terminal Form :

Wire

Length :

4.77mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Radiation Hardening :

No

Mounting Type :

Through Hole

Packaging :

Cut Tape (CT)

Current - Continuous Drain (Id) @ 25°C :

270mA Ta

Current Rating :

270mA

Continuous Drain Current (ID) :

270mA

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

FET Type :

N-Channel

Element Configuration :

Single

Width :

2.41mm

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

453.59237mg