VN10KN3-G

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Mfr.Part #
VN10KN3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 60V 310MA TO92-3
Stock
2,472
In Stock :
2,472

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Mode :
Enhancement
Series :
VN10K
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
5 Ω @ 500mA, 10V
Number of Elements per Chip :
1
Drain to Source Voltage (Vdss) :
60 V
Transistor Polarity :
N-Channel
Package Type :
TO-92
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
310mA Tj
Transistor Application :
SWITCHING
RoHS :
Details
FET Feature :
-
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Continuous Drain Current Id :
310
Product Status :
Active
Mount :
Through Hole
Height :
5.33mm
Base Product Number :
VN10KN3
Drain to Source Breakdown Voltage :
60V
Number of Elements :
1
Drain-Source On-Volt :
60(V)
Mounting :
Through Hole
Number of Terminals :
3
JESD-30 Code :
O-PBCY-T3
Length :
5.21mm
Operating Temperature :
-55°C~150°C TJ
Package Shape :
Round
Packaging :
Bulk
Configuration :
Single
Continuous Drain Current :
0.31(A)
Radiation Hardening :
No
Transistor Element Material :
SILICON
Rad Hardened :
No
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
1W Tc
Product Category :
MOSFET
JESD-609 Code :
e3
Number of Pins :
3
Pin Count :
3
DS Breakdown Voltage-Min :
60 V
Mounting Type :
Through Hole
Power Dissipation :
1W
Supplier Device Package :
TO-92-3
Gate-Source Voltage (Max) :
±30(V)
Drain Current-Max (Abs) (ID) :
0.31 A
Terminal Finish :
Matte Tin (Sn)
FET Type :
N-Channel
Operating Temp Range :
-55C to 150C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
Not Applicable
Minimum Operating Temperature :
-55 °C
Operating Temperature Classification :
Military
Feedback Cap-Max (Crss) :
5 pF
Operating Mode :
ENHANCEMENT MODE
Package :
Bag
Polarity/Channel Type :
N-Channel
Number of Channels :
1
Width :
4.19mm
Brand :
Microchip Technology / Atmel
Factory Lead Time :
6 Weeks
Gate to Source Voltage (Vgs) :
30V
Number of Terminations :
3
Vgs (Max) :
±30V
Manufacturer :
Microchip
Transistor Type :
1 N-Channel
Qualification :
-
Maximum Operating Temperature :
+150 °C
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Surface Mount :
No
Polarity :
N
ECCN Code :
EAR99
Terminal Position :
BOTTOM
Type :
Power MOSFET
Power Dissipation (Max) :
1W (Tc)
Continuous Drain Current (ID) :
310mA
Element Configuration :
Single
Reach Compliance Code :
Compliant
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
MSL :
-
Weight :
219.992299mg
Published :
2013
Channel Type :
N
Power Dissipation-Max (Abs) :
1 W
Drain-source On Resistance-Max :
5Ohm
JEDEC-95 Code :
TO-92
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
VN10KN3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VN10KN3-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1, Number of Terminations:3, Type:Power MOSFET, Package / Case:TO-226-3, TO-92-3 (TO-226AA), VN10KN3-G pinout, VN10KN3-G datasheet PDF, VN10KN3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VN10KN3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VN10KN3-G


N-Channel Bulk 5 Ω @ 500mA, 10V ±30V 60pF @ 25V 60 V TO-226-3, TO-92-3 (TO-226AA)

VN10KN3-G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 60pF @ 25V.This device has a continuous drain current (ID) of [310mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.31 A.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60 V.In order to operate this transistor, a voltage of 60 V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (5V 10V).

VN10KN3-G Features


a continuous drain current (ID) of 310mA
a drain-to-source breakdown voltage of 60V voltage
a 60 V drain to source voltage (Vdss)


VN10KN3-G Applications


There are a lot of Microchip Technology
VN10KN3-G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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