VN10LP

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Pitch :

1.27mm

Number of Pins :

3

Height :

4.01mm

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Feedback Cap-Max (Crss) :

5 pF

Length :

4.77mm

JESD-609 Code :

e3

Current Rating :

270mA

Pin Count :

3

Power Dissipation :

625mW

Drain to Source Breakdown Voltage :

60V

Number of Channels :

1

Number of Elements :

1

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

60V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

0.27A

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

2.5V

Mounting Type :

Through Hole

Number of Terminations :

3

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Element Configuration :

Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Resistance :

5Ohm

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

ECCN Code :

EAR99

Pbfree Code :

yes

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Published :

2006

Current - Continuous Drain (Id) @ 25°C :

270mA Ta

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Packaging :

Bulk

Terminal Form :

Wire

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

17 Weeks

Width :

2.41mm

Continuous Drain Current (ID) :

270mA

Weight :

453.59237mg

Mount :

Through Hole

Power Dissipation-Max :

625mW Ta