VN10LFTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

330mW

FET Type :

N-Channel

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Threshold Voltage :

2.5V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Length :

3.05mm

Lead Free :

Lead Free

Nominal Vgs :

2.5 V

Packaging :

Cut Tape (CT)

Qualification Status :

Not Qualified

Voltage - Rated DC :

60V

Published :

1997

Termination :

SMD/SMT

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Mount :

Surface Mount

Height :

1mm

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

330mW Ta

Width :

3.05mm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Resistance :

5Ohm

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

150mA Ta

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Number of Channels :

1

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

17 Weeks

Terminal Position :

Dual

Current Rating :

150mA

Dual Supply Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

7.994566mg

Feedback Cap-Max (Crss) :

5 pF

Continuous Drain Current (ID) :

150mA

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3