VN10KN3-G-P014

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

60V

FET Feature :

--

Feedback Cap-Max (Crss) :

5 pF

Base Product Number :

VN10KN3

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

--

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

Number of Channels :

1

JEDEC-95 Code :

TO-92

Channel Type :

N

Maximum Operating Temperature :

+ 150 C

Weight :

453.59237mg

Number of Elements :

1

Mounting Style :

Through Hole

Continuous Drain Current (ID) :

310mA

Element Configuration :

Single

Power Dissipation (Max) :

1W (Tc)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.31 A

RoHS :

Details

Published :

2013

Surface Mount :

No

FET Type :

N-Channel

Brand :

Microchip Technology

JESD-30 Code :

O-PBCY-T3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Width :

4.19mm

Channel Mode :

Enhancement

Product :

MOSFET Small Signal

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

310mA Tj

Reach Compliance Code :

Compliant

Mounting Type :

Through Hole

Factory Lead Time :

6 Weeks

Height :

5.33mm

Package :

Tape and Box (TB)

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Manufacturer :

Microchip

ECCN Code :

EAR99

Product Status :

Active

Length :

5.21mm

Drain-source On Resistance-Max :

5Ohm

Configuration :

Single

Continuous Drain Current Id :

0.31

Power Dissipation-Max (Abs) :

1 W

Operating Temperature :

-55°C~150°C TJ

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

1 N-Channel

Packaging :

Tape and Box (TB)

Number of Terminals :

3

Package Shape :

Round

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

1W Tc

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Supplier Device Package :

TO-92-3