VMO580-02F
- Mfr.Part #
- VMO580-02F
- Manufacturer
- Littelfuse
- Package / Case
- Y3-Li
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 580A Y3-LI
- Stock
- 36,149
- In Stock :
- 36,149
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 430A, 10V
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 580A Tc
- Mounting Type :
- Chassis Mount
- Package :
- Bulk
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- Y3-Li
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 900 ns
- DS Breakdown Voltage-Min :
- 200 V
- Drain Current-Max (Abs) (ID) :
- 580 A
- Terminal Form :
- UNSPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 50mA
- Rise Time :
- 500ns
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.0038Ohm
- JESD-30 Code :
- R-XUFM-X11
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 200 V
- Drain to Source Breakdown Voltage :
- 200V
- Fall Time (Typ) :
- 500 ns
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 11
- Surface Mount :
- No
- Manufacturer :
- IXYS Corporation
- FET Feature :
- -
- Product Status :
- Active
- Base Product Number :
- VMO580
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 580A
- ECCN Code :
- EAR99
- Published :
- 2002
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 4
- Pbfree Code :
- yes
- Terminal Position :
- UPPER
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 580A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Case Connection :
- Isolated
- Power Dissipation (Max) :
- -
- Mount :
- Chassis Mount
- Packaging :
- Bulk
- Series :
- HiPerFET™
- Base Part Number :
- VMO
- Voltage - Rated DC :
- 200V
- Operating Temperature :
- -40°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 2750nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- Y3-Li
- Number of Terminals :
- 11
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Datasheets
- VMO580-02F

N-Channel Bulk 3.8m Ω @ 430A, 10V ±20V 2750nC @ 10V 200 V Y3-Li
VMO580-02F Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 580A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.580 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 900 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200 V.Using drive voltage (10V) reduces this device's overall power consumption.
VMO580-02F Features
a continuous drain current (ID) of 580A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 900 ns
a 200 V drain to source voltage (Vdss)
VMO580-02F Applications
There are a lot of IXYS
VMO580-02F applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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