VMO580-02F
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- Mfr.Part #
- VMO580-02F
- Manufacturer
- Littelfuse
- Package / Case
- Y3-Li
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 580A Y3-LI
- Stock
- 36,149
- In Stock ：
- 36,149
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HiPerFET™
- FET Feature :
- -
- Fall Time (Typ) :
- 500 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 2750nC @ 10V
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Number of Terminals :
- 11
- Number of Terminations :
- 11
- Current Rating :
- 580A
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation (Max) :
- -
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- Isolated
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Package :
- Bulk
- Mounting Type :
- Chassis Mount
- Reach Compliance Code :
- Compliant
- Turn-Off Delay Time :
- 900 ns
- Mount :
- Chassis Mount
- Drain-source On Resistance-Max :
- 0.0038Ohm
- Lead Free :
- Lead Free
- Package / Case :
- Y3-Li
- Packaging :
- Bulk
- Published :
- 2002
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 580A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 4
- Base Part Number :
- VMO
- Terminal Form :
- UNSPECIFIED
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 200 V
- Base Product Number :
- VMO580
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- UPPER
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 200V
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 430A, 10V
- Voltage - Rated DC :
- 200V
- Supplier Device Package :
- Y3-Li
- Rise Time :
- 500ns
- Manufacturer :
- IXYS Corporation
- Continuous Drain Current (ID) :
- 580A
- Operating Temperature :
- -40°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 50mA
- JESD-30 Code :
- R-XUFM-X11
- Drain to Source Voltage (Vdss) :
- 200 V
- Drain Current-Max (Abs) (ID) :
- 580 A
- Datasheets
- VMO580-02F
VMO580-02F Documents
N-Channel Bulk 3.8m Ω @ 430A, 10V ±20V 2750nC @ 10V 200 V Y3-Li
VMO580-02F Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 580A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.580 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 900 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200 V.Using drive voltage (10V) reduces this device's overall power consumption.
VMO580-02F Features
a continuous drain current (ID) of 580A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 900 ns
a 200 V drain to source voltage (Vdss)
VMO580-02F Applications
There are a lot of IXYS
VMO580-02F applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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