VMO550-01F
- Mfr.Part #
- VMO550-01F
- Manufacturer
- Littelfuse
- Package / Case
- Y3-DCB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 590A Y3-DCB
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 50000pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 590 A
- Qualification Status :
- Not Qualified
- Series :
- HiPerFET™
- Number of Pins :
- 4
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 100 V
- DS Breakdown Voltage-Min :
- 100 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 2.2kW
- Drain to Source Resistance :
- 2.1 mΩ
- Vgs (Max) :
- ±20V
- Terminal Form :
- UNSPECIFIED
- FET Feature :
- -
- Continuous Drain Current (ID) :
- 590A
- Package :
- Bulk
- Turn-Off Delay Time :
- 800 ns
- Min Operating Temperature :
- -40 °C
- Number of Terminals :
- 4
- Number of Terminations :
- 4
- Base Part Number :
- VMO
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 590A Tc
- Terminal Position :
- UPPER
- Pbfree Code :
- yes
- RoHS :
- Compliant
- Mount :
- Chassis Mount
- Input Capacitance :
- 50 nF
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- Isolated
- Max Operating Temperature :
- 150 °C
- Package / Case :
- Y3-DCB
- Power Dissipation-Max (Abs) :
- 2200 W
- Base Product Number :
- VMO550
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Chassis Mount
- Max Power Dissipation :
- 2.2 kW
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 2000nC @ 10V
- Power Dissipation (Max) :
- 2200W (Tc)
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Published :
- 2000
- Drain-source On Resistance-Max :
- 0.0021Ohm
- Rds On Max :
- 2.1 mΩ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 200 ns
- Supplier Device Package :
- Y3-DCB
- Drain to Source Breakdown Voltage :
- 100V
- Packaging :
- Bulk
- Manufacturer :
- IXYS Corporation
- Rds On (Max) @ Id, Vgs :
- 2.1m Ω @ 500mA, 10V
- Operating Temperature :
- -40°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 500ns
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 2360A
- Vgs(th) (Max) @ Id :
- 6V @ 110mA
- JESD-30 Code :
- R-PUFM-X4
- Product Status :
- Active
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 2200W Tc
- Datasheets
- VMO550-01F
VMO550-01F Documents
N-Channel Bulk 2.1m Ω @ 500mA, 10V ±20V 50000pF @ 25V 2000nC @ 10V 100 V Y3-DCB
VMO550-01F Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 590A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 590 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 800 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2360A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 2.1 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100 V in order to maintain normal operation.Operating this transistor requires a 100 V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
VMO550-01F Features
a continuous drain current (ID) of 590A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 800 ns
based on its rated peak drain current 2360A.
single MOSFETs transistor is 2.1 mΩ
a 100 V drain to source voltage (Vdss)
VMO550-01F Applications
There are a lot of IXYS
VMO550-01F applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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