VMO550-01F

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Mfr.Part #
VMO550-01F
Manufacturer
Littelfuse
Package / Case
Y3-DCB
Datasheet
Download
Description
MOSFET N-CH 100V 590A Y3-DCB
Stock
6
In Stock :
6

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On Max :
2.1 mΩ
RoHS :
Compliant
Pbfree Code :
yes
FET Type :
N-Channel
Max Operating Temperature :
150 °C
Gate Charge (Qg) (Max) @ Vgs :
2000nC @ 10V
Power Dissipation-Max :
2200W Tc
Drain to Source Resistance :
2.1 mΩ
Power Dissipation (Max) :
2200W (Tc)
Reach Compliance Code :
Compliant
Fall Time (Typ) :
200 ns
Input Capacitance (Ciss) (Max) @ Vds :
50000pF @ 25V
Vgs(th) (Max) @ Id :
6V @ 110mA
DS Breakdown Voltage-Min :
100 V
Transistor Element Material :
SILICON
Case Connection :
Isolated
Base Product Number :
VMO550
Supplier Device Package :
Y3-DCB
Rds On (Max) @ Id, Vgs :
2.1m Ω @ 500mA, 10V
Number of Terminations :
4
Min Operating Temperature :
-40 °C
JESD-30 Code :
R-PUFM-X4
Gate to Source Voltage (Vgs) :
20V
Base Part Number :
VMO
Drain-source On Resistance-Max :
0.0021Ohm
Power Dissipation :
2.2kW
Packaging :
Bulk
Drain to Source Voltage (Vdss) :
100 V
Qualification Status :
Not Qualified
Turn-Off Delay Time :
800 ns
Input Capacitance :
50 nF
Number of Terminals :
4
Transistor Application :
SWITCHING
Mounting Type :
Chassis Mount
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
590 A
FET Feature :
-
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
No
Mount :
Chassis Mount
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
UPPER
Series :
HiPerFET™
Number of Pins :
4
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
2.2 kW
Pulsed Drain Current-Max (IDM) :
2360A
Drain to Source Breakdown Voltage :
100V
Manufacturer :
IXYS Corporation
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2000
Continuous Drain Current (ID) :
590A
Vgs (Max) :
±20V
Terminal Form :
UNSPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
500ns
Operating Temperature :
-40°C~150°C TJ
Product Status :
Active
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Power Dissipation-Max (Abs) :
2200 W
Package / Case :
Y3-DCB
Package :
Bulk
Current - Continuous Drain (Id) @ 25°C :
590A Tc
Datasheets
VMO550-01F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse VMO550-01F from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Base Part Number:VMO, Mounting Type:Chassis Mount, Number of Pins:4, Operating Temperature:-40°C~150°C TJ, Package / Case:Y3-DCB, VMO550-01F pinout, VMO550-01F datasheet PDF, VMO550-01F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse VMO550-01F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 2.1m Ω @ 500mA, 10V ±20V 50000pF @ 25V 2000nC @ 10V 100 V Y3-DCB

VMO550-01F Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 590A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 590 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 800 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2360A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 2.1 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100 V in order to maintain normal operation.Operating this transistor requires a 100 V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

VMO550-01F Features


a continuous drain current (ID) of 590A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 800 ns
based on its rated peak drain current 2360A.
single MOSFETs transistor is 2.1 mΩ
a 100 V drain to source voltage (Vdss)


VMO550-01F Applications


There are a lot of IXYS
VMO550-01F applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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