UPA2450BTL-E1-A
- Mfr.Part #
- UPA2450BTL-E1-A
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 6-VFDFN Exposed Pad
- Datasheet
- Download
- Description
- SMALL SIGNAL N-CHANNEL MOSFET
- Stock
- 23,353
- In Stock :
- 23,353
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Power - Max :
- 700mW
- Rds On (Max) @ Id, Vgs :
- 17.5mOhm @ 4A, 4.5V
- Continuous Drain Current (ID) :
- 8.6 A
- Reach Compliance Code :
- Compliant
- Drain to Source Resistance :
- 12.5 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4V
- Series :
- -
- FET Type :
- 2 N-Channel (Dual)
- Drain Current-Max (Abs) (ID) :
- 8.6 A
- Gate to Source Voltage (Vgs) :
- 12 V
- Pbfree Code :
- yes
- Power Dissipation-Max (Abs) :
- 2.5 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 2.5 W
- Product Status :
- Obsolete
- FET Feature :
- Logic Level Gate
- Manufacturer :
- Renesas Electronics Corporation
- Factory Lead Time :
- 1 Week
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Drain to Source Voltage (Vdss) :
- 20 V
- Brand Name :
- Renesas
- Subcategory :
- FET General Purpose Power
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 10V
- Supplier Device Package :
- 6-HWSON
- Drain to Source Breakdown Voltage :
- 20 V
- RoHS :
- Compliant
- Package :
- Bulk
- Current - Continuous Drain (Id) @ 25°C :
- 8.6A
- Number of Pins :
- 6
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- 6-VFDFN Exposed Pad
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- yes
- Pin Count :
- 6
- Channel Type :
- Dual N
- Datasheets
- UPA2450BTL-E1-A

2 N-Channel (Dual) 17.5mOhm @ 4A, 4.5V 520pF @ 10V 8nC @ 4V 20 V 6-VFDFN Exposed Pad
UPA2450BTL-E1-A Overview
A device's maximal input capacitance is 520pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8.6 A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20 V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8.6 A, which is the maximum continuous current the device can conduct.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12.5 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12 V volts.This transistor requires a 20 V drain to source voltage (Vdss).
UPA2450BTL-E1-A Features
a continuous drain current (ID) of 8.6 A
a drain-to-source breakdown voltage of 20 V voltage
single MOSFETs transistor is 12.5 mΩ
a 20 V drain to source voltage (Vdss)
UPA2450BTL-E1-A Applications
There are a lot of Renesas
UPA2450BTL-E1-A applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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