UMZ7NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Dual

Pbfree Code :

yes

Polarity :

NPN, PNP

Published :

2012

Frequency - Transition :

320MHz 260MHz

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

6V

Factory Lead Time :

10 Weeks

Continuous Collector Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

10

Radiation Hardening :

No

Number of Terminations :

6

Pin Count :

6

Terminal Finish :

TIN COPPER

HTS Code :

8541.21.00.75

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Breakdown Voltage :

12V

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 200mA

Mount :

Surface Mount

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

15V

Max Collector Current :

500mA

Base Part Number :

*MZ7

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Saturation Voltage :

-100mV

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 10mA 2V

JESD-609 Code :

e2

Max Breakdown Voltage :

12V

Transistor Type :

NPN, PNP

Terminal Form :

Gull wing

hFE Min :

270

Current Rating :

500mA

Transition Frequency :

320MHz

Collector Emitter Voltage (VCEO) :

12V

Lead Free :

Lead Free

Number of Elements :

2

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

150mW

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Gain Bandwidth Product :

260MHz