UMT2222AT106
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- Mfr.Part #
- UMT2222AT106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A UMT3
- Stock
- 8,669
- In Stock ：
- 8,669
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Factory Lead Time :
- 13 Weeks
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 40V
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e1
- HTS Code :
- 8541.21.00.75
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 600mA
- Turn Off Time-Max (toff) :
- 285ns
- Transition Frequency :
- 300MHz
- Transistor Type :
- NPN
- hFE Min :
- 35
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Terminal Finish :
- TIN SILVER COPPER
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 75V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 300MHz
- Published :
- 2006
- Collector-Base Capacitance-Max :
- 7pF
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Current Rating :
- 600mA
- Max Collector Current :
- 600mA
- Collector Emitter Saturation Voltage :
- 1V
- Polarity/Channel Type :
- NPN
- Base Part Number :
- T2222A
- Contact Plating :
- Copper, Silver, Tin
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 40V
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Datasheets
- UMT2222AT106
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
UMT2222AT106 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 600mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
UMT2222AT106 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
UMT2222AT106 Applications
There are a lot of ROHM Semiconductor
UMT2222AT106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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