UMN11NTN
- Mfr.Part #
- UMN11NTN
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- DIODE ARRAY GP 80V 100MA UMD6
- Stock
- 176,709
- In Stock :
- 176,709
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Diodes - Rectifiers - Arrays
- Number of Pins :
- 6
- Peak Reflow Temperature (Cel) :
- 260
- Max Surge Current :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Average Rectified Current :
- 100mA
- Max Repetitive Reverse Voltage (Vrrm) :
- 80V
- Mounting Type :
- Surface Mount
- Width :
- 508μm
- Element Configuration :
- Common Cathode
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature - Junction :
- 150°C Max
- Ratings :
- AEC-Q200
- Radiation Hardening :
- No
- Reverse Recovery Time :
- 4 ns
- Base Part Number :
- MN11
- Diode Configuration :
- 2 Pair Common Cathode
- Voltage - Forward (Vf) (Max) @ If :
- 1.2V @ 100mA
- Length :
- 1.6002mm
- Thickness :
- 889μm
- Case Code (Imperial) :
- 0201
- Min Operating Temperature :
- -55°C
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Published :
- 2001
- Current - Reverse Leakage @ Vr :
- 100nA @ 70V
- Pin Count :
- 6
- Pbfree Code :
- yes
- Max Power Dissipation :
- 150mW
- Peak Reverse Current :
- 100nA
- Tolerance :
- 10%
- Current Rating :
- 100mA
- Power Dissipation :
- 150mW
- Recovery Time :
- 4 ns
- REACH SVHC :
- No SVHC
- Max Reverse Voltage (DC) :
- 80V
- Case Code (Metric) :
- 0603
- Diode Type :
- Standard
- Capacitance :
- 6.8nF
- JESD-609 Code :
- e2
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Output Current :
- 100mA
- Peak Non-Repetitive Surge Current :
- 4A
- Forward Current :
- 100mA
- Mount :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- Voltage - Rated DC :
- 80V
- Packaging :
- Tape and Reel (TR)
- Max Operating Temperature :
- 150°C
- Termination :
- SMD/SMT
- Number of Elements :
- 4
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Diode Element Material :
- SILICON
- Reverse Test Voltage :
- 70V
- Max Reverse Leakage Current :
- 100nA
- Max Forward Surge Current (Ifsm) :
- 4A
- Height :
- 900μm
- Number of Terminations :
- 6
- ECCN Code :
- EAR99
- HTS Code :
- 8541.10.00.70
- Forward Voltage :
- 1.2V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Voltage - Rated :
- 100V
- Datasheets
- UMN11NTN
UMN11NTN Documents

Standard Rectifier Diode 2 Pair Common Cathode Small Signal =< 200mA (Io), Any Speed 150°C Max 100mA 80V-DC 4-Element 6-TSSOP, SC-88, SOT-363 Surface Mount
UMN11NTN Overview
Devices that have a forward voltage of 1.2V will operate.Keeping the surge current under 4A and preventing it from exceeding it should be the rule.Devices that have a forward voltage of 100mA will operate.Array is possible to draw current from the part of 100mA.This device has a capacitance of about 6.8nF farads.The reverse voltage peak of this device is 100nA.The maximum reverse leakage current from a semiconductor device when reverse biased is 100nA.As a derivative of its primary action, this electronic or electrical device generates 150mW of heat.A device like this produces the most 150mW heat (energy loss or waste).
UMN11NTN Features
1.2V forward voltage
6.8nF farads
a peak voltage of 100nA
a reverse voltage peak of 100nA
UMN11NTN Applications
There are a lot of ROHM Semiconductor
UMN11NTN applications of rectifier diode array.
- Rectifier for drives applications
- Crowbar applications
- Rectifiers for UBS
- Battery chargers
- Rectifiers in switch mode power supplies (SMPS)
- Free wheeling diode in low voltage converters
- General Rectification
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