UMH4NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Power Dissipation :

150mW

Operating Supply Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

TIN COPPER

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Transition Frequency :

250MHz

Emitter Base Voltage (VEBO) :

5V

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Collector Current :

100mA

Lead Free :

Lead Free

Max Power Dissipation :

150mW

Published :

2008

Additional Feature :

Digital

Max Output Current :

100mA

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Terminations :

6

hFE Min :

100

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

Max Collector Current :

100mA

JESD-609 Code :

e2

DC Current Gain-Min (hFE) :

100

VCEsat-Max :

0.3 V

Mount :

Surface Mount

HTS Code :

8541.21.00.75

ECCN Code :

EAR99

Number of Pins :

6

Voltage - Rated DC :

50V

Polarity :

NPN

Radiation Hardening :

No

Current Rating :

100mA

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Termination :

SMD/SMT

Package / Case :

SOT-363

Min Operating Temperature :

-55°C

Number of Elements :

2

Collector Base Voltage (VCBO) :

50V

Terminal Form :

Gull wing

Element Configuration :

Dual