UMC3NT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Min Operating Temperature :

-65°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Base Voltage (VCBO) :

50V

Resistor - Base (R1) :

10k Ω

Current - Collector Cutoff (Max) :

500nA

JESD-609 Code :

e3

Voltage - Rated DC :

50V

Mounting Type :

Surface Mount

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

150mW

Number of Pins :

5

Number of Terminations :

5

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Number of Elements :

2

Pin Count :

5

Published :

2009

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Current Rating :

100mA

Max Power Dissipation :

150mW

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

hFE Min :

35

Lead Free :

Lead Free

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Continuous Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Resistor - Emitter Base (R2) :

10k Ω

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Transistor Application :

SWITCHING