UM6J1NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

200mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Factory Lead Time :

16 Weeks

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

JESD-609 Code :

e2

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

0.2A

Pin Count :

6

Fall Time (Typ) :

40 ns

Pbfree Code :

yes

Published :

2011

Turn-Off Delay Time :

30 ns

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 200mA, 10V

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Base Part Number :

*J1

Number of Pins :

6

Terminal Finish :

TIN COPPER

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Power Dissipation :

150mW

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

8 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 10V

Rise Time :

5ns