ULN2803APG,CN

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Mfr.Part #
ULN2803APG,CN
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
18-DIP (0.300, 7.62mm)
Datasheet
Download
Description
TRANS 8NPN DARL 50V 0.5A 18DIP
Stock
1,582
In Stock :
1,582

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Arrays
Packaging :
Tube
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 350mA 2V
Voltage - Collector Emitter Breakdown (Max) :
50V
Current - Collector (Ic) (Max) :
500mA
Power - Max :
1.47W
Operating Temperature :
-40°C~85°C TA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
8 NPN Darlington
Base Part Number :
ULN280*A
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 500μA, 350mA
Mounting Type :
Through Hole
Package / Case :
18-DIP (0.300, 7.62mm)
Published :
2012
Datasheets
ULN2803APG,CN
Introducing Transistors - Bipolar (BJT) - Arrays Toshiba Electronic Devices and Storage Corporation ULN2803APG,CN from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~85°C TA, Base Part Number:ULN280*A, Mounting Type:Through Hole, Package / Case:18-DIP (0.300, 7.62mm), ULN2803APG,CN pinout, ULN2803APG,CN datasheet PDF, ULN2803APG,CN amp .Beyond Transistors - Bipolar (BJT) - Arrays Toshiba Electronic Devices and Storage Corporation ULN2803APG,CN ,we also offer NCV1413BDR2G, ZXTD4591E6TA, ZXTD6717E6TA, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation ULN2803APG,CN


ULN2803APG,CN datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available at

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