TTD1415B,S4X(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Minimum Operating Temperature (°C) :

-55

PCB changed :

3

Pin Count :

3

Operating Temperature Classification :

Military

Configuration :

Single

PPAP :

No

Maximum Operating Temperature (°C) :

150

Maximum Emitter Base Voltage (V) :

6

Number of Elements :

1

Automotive :

No

Mounting :

Through Hole

Emitter-Base Voltage :

6(V)

Maximum Collector Cut-off Current :

2

Maximum Power Dissipation (mW) :

20000

Product Status :

Active

Package Width :

4.5

Length :

100mm

Type :

NPN

Maximum Collector Base Voltage (V) :

120

Base-Emitter Saturation Voltage (Max) :

2(V)

Supplier Package :

TO-220SIS

Package Length :

10

Collector-Base Voltage :

120(V)

Width :

4.5mm

Maximum Collector-Emitter Voltage (V) :

100

Rad Hardened :

No

Series :

*

Standard Package Name :

TO-220

Maximum Collector-Emitter Saturation Voltage (V) :

1.5@6mA@3A

Package Type :

TO-220SIS

Maximum Operating Temperature :

+150 °C

Collector Current (DC) :

7(A)

Maximum DC Current Gain :

15000@3A@3V

Maximum Continuous DC Collector Current (A) :

7

Number of Elements per Chip :

1

Maximum Collector Cut-Off Current (uA) :

2

Maximum Base Emitter Saturation Voltage (V) :

2@6mA@3A

Operating Junction Temperature (°C) :

150

Transistor Type :

PNP

Mounting Type :

Through Hole

Maximum Base Current (A) :

0.7

Power Dissipation :

20(W)

Package Height :

15

Dimensions :

10 x 4.5 x 15mm

Tab :

Tab

Package :

Tube

Packaging :

Magazine

Minimum DC Current Gain :

1000@6A@3V|2000@3A@3V

ECCN (US) :

EAR99

Polarity :

NPN

RoHS :

Non-Compliant

Operating Temp Range :

-55C to 150C

EU RoHS :

Compliant

Height :

15mm

Base Product Number :

TTD1415

Minimum DC Current Gain Range :

500 to 3600