TTC5200(Q)
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- Mfr.Part #
- TTC5200(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3PL
- Datasheet
- Download
- Description
- TRANS NPN 230V 15A TO3P
- Stock
- 4,967
- In Stock ：
- 4,967
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Max Power Dissipation :
- 150W
- Width :
- 5.2mm
- Power Dissipation :
- 150W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 15A
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 12 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Collector Emitter Breakdown Voltage :
- 230V
- Number of Pins :
- 3
- Packaging :
- Tray
- Lead Free :
- Lead Free
- Published :
- 2009
- Length :
- 20.5mm
- Height :
- 26mm
- Collector Emitter Voltage (VCEO) :
- 230V
- Mount :
- Through Hole
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 30MHz
- Collector Emitter Saturation Voltage :
- 3V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Collector Base Voltage (VCBO) :
- 230V
- Frequency :
- 30MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Mounting Type :
- Through Hole
- hFE Min :
- 80
- Package / Case :
- TO-3PL
- Operating Temperature :
- 150°C TJ
- Datasheets
- TTC5200(Q)
NPN 150°C TJ 5μA ICBO 1 Elements TO-3PL Tray Through Hole
TTC5200(Q) Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 15A volts.
TTC5200(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
TTC5200(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
TTC5200(Q) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TTC5460B,Q(S | Toshiba Electronic Devices and Storage Corporation | 11,992 | TRANSISTOR NPN TO126N |
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