TTA1943(Q)
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- Mfr.Part #
- TTA1943(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3PL
- Datasheet
- Download
- Description
- TRANS PNP 230V 15A TO3P
- Stock
- 18,400
- In Stock ：
- 18,400
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -3V
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 230V
- Frequency :
- 30MHz
- Width :
- 5.2mm
- Max Power Dissipation :
- 150W
- Power Dissipation :
- 150W
- Collector Emitter Breakdown Voltage :
- 230V
- Package / Case :
- TO-3PL
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Mount :
- Through Hole
- Element Configuration :
- Single
- hFE Min :
- 80
- Max Collector Current :
- 15A
- Collector Base Voltage (VCBO) :
- 230V
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 16 Weeks
- Emitter Base Voltage (VEBO) :
- -5V
- Height :
- 26mm
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Radiation Hardening :
- No
- Published :
- 2009
- Gain Bandwidth Product :
- 30MHz
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Length :
- 20.5mm
- Datasheets
- TTA1943(Q)
PNP 150°C TJ 5μA ICBO 1 Elements TO-3PL Tube Through Hole
TTA1943(Q) Overview
In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -3V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
TTA1943(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
TTA1943(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
TTA1943(Q) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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