TSM80N950CI C0G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

800V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

18A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

25W Tc

Rds On (Max) @ Id, Vgs :

950m Ω @ 2A, 10V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

6A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

800V

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Drain-source On Resistance-Max :

0.95Ohm

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

121 mJ

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

6A Tc

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

19.6nC @ 10V

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±30V

Factory Lead Time :

24 Weeks

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

691pF @ 100V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA