TSM80N1R2CL C0G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drain to Source Voltage (Vdss) :

800V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

685pF @ 100V

Avalanche Energy Rating (Eas) :

121 mJ

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Power Dissipation-Max :

110W Tc

Terminal Position :

Single

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1.8A, 10V

Gate Charge (Qg) (Max) @ Vgs :

19.4nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

5.5A

DS Breakdown Voltage-Min :

800V

Pulsed Drain Current-Max (IDM) :

16.5A

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

JEDEC-95 Code :

TO-262AA

FET Type :

N-Channel

Package / Case :

TO-262-3 Short Leads, I2Pak