TSM650N15CS RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

12.5W Tc

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

20 Weeks

Transistor Element Material :

SILICON

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

60 mJ

Rds On (Max) @ Id, Vgs :

65m Ω @ 4A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Digi-Reel®

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1783pF @ 75V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

36A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

4A

Drain-source On Resistance-Max :

0.08Ohm

DS Breakdown Voltage-Min :

150V

Number of Terminations :

8

JESD-30 Code :

R-PDSO-G8

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

150V

Configuration :

SINGLE WITH BUILT-IN DIODE