TSM60N600CH C5G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Power Dissipation-Max :

83W Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Supplier Device Package :

TO-251 (IPAK)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds :

743pF @ 100V

Rds On (Max) @ Id, Vgs :

600mOhm @ 4A, 10V

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant