TSM650N15CR RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1829pF @ 75V

Drain-source On Resistance-Max :

0.08Ohm

Number of Terminations :

5

Factory Lead Time :

18 Weeks

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

49 mJ

Drain to Source Voltage (Vdss) :

150V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

DS Breakdown Voltage-Min :

150V

Power Dissipation-Max :

96W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

96A

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

JESD-30 Code :

R-PDSO-F5

Packaging :

Digi-Reel®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

65m Ω @ 4A, 10V

Number of Elements :

1

Terminal Form :

Flat

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

4A