TSM60NB600CH C5G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

7A

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

21A

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.6Ohm

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

516pF @ 100V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

7A Tc

JESD-30 Code :

R-PSIP-T3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Avalanche Energy Rating (Eas) :

36 mJ

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Factory Lead Time :

36 Weeks

DS Breakdown Voltage-Min :

600V

FET Type :

N-Channel

Power Dissipation-Max :

63W Tc

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Terminal Position :

Single