TSM60NB380CH C5G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Number of Terminations :

3

Vgs (Max) :

±30V

Operating Temperature :

-50°C~150°C TJ

Avalanche Energy Rating (Eas) :

64 mJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate Charge (Qg) (Max) @ Vgs :

19.4nC @ 10V

Factory Lead Time :

36 Weeks

Pulsed Drain Current-Max (IDM) :

28.5A

Power Dissipation-Max :

83W Tc

Rds On (Max) @ Id, Vgs :

380m Ω @ 2.85A, 10V

FET Type :

N-Channel

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

795pF @ 100V

Drain-source On Resistance-Max :

0.38Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Terminal Position :

Single

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

9.5A

Transistor Element Material :

SILICON

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V