TSM60NB099CF C0G
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- Mfr.Part #
- TSM60NB099CF C0G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 38A ITO220S
- Stock
- 905
- In Stock ：
- 905
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2587pF @ 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 69W Tc
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3 Full Pack
- Rds On (Max) @ Id, Vgs :
- 99m Ω @ 5.3A, 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Factory Lead Time :
- 36 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Datasheets
- TSM60NB099CF C0G
N-Channel 99m Ω @ 5.3A, 10V ±30V 2587pF @ 100V 62nC @ 10V 600V TO-220-3 Full Pack
TSM60NB099CF C0G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2587pF @ 100V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
TSM60NB099CF C0G Features
a 600V drain to source voltage (Vdss)
TSM60NB099CF C0G Applications
There are a lot of Taiwan Semiconductor Corporation
TSM60NB099CF C0G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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