TPH2R903PL,L1Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerVDFN

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Mounting Style :

SMD/SMT

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 175 C

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

2.9mOhm @ 35A, 10V

Product Status :

Active

Rise Time :

4.7 ns

Vgs(th) (Max) @ Id :

2.1V @ 200μA

Power Dissipation (Max) :

960mW (Ta), 81W (Tc)

FET Feature :

-

Series :

U-MOSIX-H

Supplier Device Package :

8-SOP Advance (5x5)

Operating Temperature :

175°C

Packaging :

Reel

FET Type :

N-Channel

RoHS :

Details

Transistor Type :

1 N-Channel

Mounting Type :

Surface Mount

Brand :

Toshiba

Tradename :

U-MOSIX-H

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

2300 pF @ 15 V

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

70A (Tc)

Configuration :

Single

Drain to Source Voltage (Vdss) :

30 V

Transistor Polarity :

N-Channel

Manufacturer :

Toshiba

Gate Charge (Qg) (Max) @ Vgs :

26 nC @ 10 V

Vgs (Max) :

±20V

Subcategory :

MOSFETs

Package :

Tape and Reel (TR)