TPH2R506PL,L1Q
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- Mfr.Part #
- TPH2R506PL,L1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 100A 8SOP
- Stock
- 13,904
- In Stock ：
- 13,904
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Packaging :
- Tape and Reel (TR)
- Published :
- 2016
- Factory Lead Time :
- 12 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs(th) (Max) @ Id :
- 2.5V @ 500μA
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Operating Temperature :
- 175°C TJ
- Package / Case :
- 8-PowerVDFN
- Rds On (Max) @ Id, Vgs :
- 4.4m Ω @ 30A, 4.5V
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 132W Tc
- Series :
- U-MOSIX-H
- Input Capacitance (Ciss) (Max) @ Vds :
- 5435pF @ 30V
- Datasheets
- TPH2R506PL,L1Q
N-Channel Tape & Reel (TR) 4.4m Ω @ 30A, 4.5V ±20V 5435pF @ 30V 60nC @ 10V 60V 8-PowerVDFN
TPH2R506PL,L1Q Overview
A device's maximal input capacitance is 5435pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
TPH2R506PL,L1Q Features
a 60V drain to source voltage (Vdss)
TPH2R506PL,L1Q Applications
There are a lot of Toshiba Semiconductor and Storage
TPH2R506PL,L1Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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