TPCP8J01(TE85L,F,M

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 10V

Drain to Source Breakdown Voltage :

-32V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Packaging :

Tape and Reel (TR)

Published :

2007

Mount :

Surface Mount

Element Configuration :

Single

Number of Pins :

8

Package / Case :

8-SMD, Flat Lead

Turn-Off Delay Time :

22 ns

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Power Dissipation :

1.06W

Vgs (Max) :

±20V

Fall Time (Typ) :

90 ns

Drain to Source Voltage (Vdss) :

32V

Factory Lead Time :

12 Weeks

FET Type :

P-Channel

Power Dissipation-Max :

2.14W Ta

Rds On (Max) @ Id, Vgs :

35m Ω @ 3A, 10V

Rise Time :

12ns

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Vgs(th) (Max) @ Id :

2V @ 1mA