TPCP8103-H(TE85LFM

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.8A Ta

Turn-Off Delay Time :

9 ns

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

4.8A

FET Type :

P-Channel

Package / Case :

8-SMD, Flat Lead

Series :

U-MOSIII-H

Power Dissipation-Max :

840mW Ta

Vgs(th) (Max) @ Id :

2V @ 1mA

Rds On (Max) @ Id, Vgs :

40m Ω @ 2.4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Turn On Delay Time :

6.5 ns