TPC8A06-H(TE12LQM)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

Schottky Diode (Body)

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

10.1mOhm @ 6A, 10V

Supplier Device Package :

8-SOP (5.5x6.0)

Input Capacitance :

1.8nF

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2009

FET Type :

N-Channel

Number of Pins :

8

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Fall Time (Typ) :

3.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Rise Time :

2.4ns

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Min Operating Temperature :

-55°C

Rds On Max :

10.1 mΩ