TPC8026(TE12L,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

21 ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 10V

Rds On (Max) @ Id, Vgs :

6.6mOhm @ 6.5A, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance :

1.8nF

Power Dissipation :

1.9W

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Rise Time :

15ns

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

6.6mOhm

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Power Dissipation-Max :

1W Ta

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Published :

2009

Rds On Max :

6.6 mΩ

Mount :

Surface Mount

Supplier Device Package :

8-SOP (5.5x6.0)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Continuous Drain Current (ID) :

13A

Drain to Source Voltage (Vdss) :

30V