TPC8A05-H(TE12L,QM

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A Ta

FET Feature :

Schottky Diode (Body)

Vgs (Max) :

±20V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Series :

U-MOSV-H

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 10V

Input Capacitance :

1.7nF

Rds On (Max) @ Id, Vgs :

13.3mOhm @ 5A, 10V

Fall Time (Typ) :

2.5 ns

Supplier Device Package :

8-SOP (5.5x6.0)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Power Dissipation-Max :

1W Ta

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Rise Time :

2ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2009

Continuous Drain Current (ID) :

10A

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Rds On Max :

13.3 mΩ

Min Operating Temperature :

-55°C