TPC8134,LQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

40V

FET Type :

P-Channel

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Series :

U-MOSVI

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Vgs(th) (Max) @ Id :

2V @ 100µA

Fall Time (Typ) :

30 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 10V

Number of Pins :

8

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.066Ohm

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Continuous Drain Current (ID) :

5A

Rds On (Max) @ Id, Vgs :

52m Ω @ 2.5A, 10V

Factory Lead Time :

12 Weeks

Number of Elements :

1

Published :

2009

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1W Ta

Vgs (Max) :

+20V, -25V

DS Breakdown Voltage-Min :

40V

Rise Time :

8ns

Drain Current-Max (Abs) (ID) :

5A

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE