TPC8133,LQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Continuous Drain Current (ID) :

9A

Rds On Max :

15 mΩ

Supplier Device Package :

8-SOP

Rds On (Max) @ Id, Vgs :

15mOhm @ 4.5A, 10V

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Min Operating Temperature :

-55°C

Series :

U-MOSVI

Max Operating Temperature :

150°C

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 500μA

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 10V

Drain to Source Voltage (Vdss) :

40V

FET Type :

P-Channel

Power Dissipation-Max :

1W Ta

Input Capacitance :

2.9nF

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

+20V, -25V

Rise Time :

8ns

Fall Time (Typ) :

100 ns

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Radiation Hardening :

No