TPC8129,LQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Continuous Drain Current (ID) :

9A

Series :

U-MOSVI

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 200μA

Rise Time :

8ns

Fall Time (Typ) :

42 ns

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

22m Ω @ 4.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 10V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Power Dissipation-Max :

1W Ta

Mounting Type :

Surface Mount

FET Type :

P-Channel

Vgs (Max) :

+20V, -25V