TPC8111(TE12L,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

109 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Number of Terminations :

8

Number of Elements :

1

Drain to Source Breakdown Voltage :

-30V

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Power Dissipation-Max :

1W Ta

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

5710pF @ 10V

RoHS Status :

RoHS Compliant

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Rise Time :

18ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

11A

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Published :

2009

Vgs(th) (Max) @ Id :

2V @ 1mA

Rds On (Max) @ Id, Vgs :

12m Ω @ 5.5A, 10V

Power Dissipation :

1.9W