TPC8065-H,LQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

8-SOP

Radiation Hardening :

No

Power Dissipation-Max :

1W Ta

Rds On (Max) @ Id, Vgs :

11.6mOhm @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 10V

Rise Time :

2.1ns

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Input Capacitance :

1.35nF

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

13A

Vgs(th) (Max) @ Id :

2.3V @ 200μA

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Max Operating Temperature :

150°C

Factory Lead Time :

12 Weeks

Rds On Max :

11.6 mΩ

Published :

2008

Mount :

Surface Mount

FET Type :

N-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

U-MOSVII-H

Fall Time (Typ) :

2.4 ns

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V