TP2640N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

40 ns

Product Status :

Obsolete

Brand :

Microchip Technology / Atmel

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Style :

Through Hole

Package :

Bag

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Power Dissipation-Max :

1W Ta

Current - Continuous Drain (Id) @ 25°C :

180mA Tj

JESD-609 Code :

e3

Terminal Position :

BOTTOM

Series :

--

Rds On (Max) @ Id, Vgs :

15 Ω @ 300mA, 10V

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

400V

Manufacturer :

Microchip

Configuration :

Single

Factory Lead Time :

14 Weeks

Transistor Type :

1 P-Channel

FET Feature :

--

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

180mA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Product Category :

MOSFET

Number of Pins :

3

FET Type :

P-Channel

Width :

4.19mm

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

Weight :

219.992299mg

Transistor Application :

SWITCHING

Supplier Device Package :

TO-92-3

Number of Terminations :

3

Type :

FET

Rise Time :

15ns

Transistor Polarity :

P-Channel

Channel Mode :

Enhancement

Mounting Type :

Through Hole

Turn On Delay Time :

10 ns

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Minimum Operating Temperature :

- 55 C

Height :

5.33mm

Length :

5.21mm

RoHS :

Details

Power Dissipation :

1W

Packaging :

Bulk

Drain to Source Breakdown Voltage :

-400V

Number of Elements :

1

Turn-Off Delay Time :

60 ns

Element Configuration :

Single

Radiation Hardening :

No

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Power Dissipation (Max) :

1W (Ta)