TP2640LG-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Product Category :

MOSFET

Terminal Form :

Gull wing

JESD-609 Code :

e3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Pins :

8

Turn-Off Delay Time :

60 ns

Operating Mode :

ENHANCEMENT MODE

Channel Mode :

Enhancement

Power Dissipation :

1.3W

Type :

FET

RoHS :

Details

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-400V

Qualification Status :

Not Qualified

Product Type :

MOSFET

Product :

MOSFET Small Signal

Number of Elements :

1

Power Dissipation (Max) :

740mW (Ta)

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

15 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

6 Weeks

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.65mm

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

400V

Supplier Device Package :

8-SOIC

Weight :

84.99187mg

Minimum Operating Temperature :

- 55 C

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Polarity :

P-Channel

Mount :

Surface Mount

Brand :

Microchip Technology

Mounting Style :

SMD/SMT

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

15 Ω @ 300mA, 10V

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

86mA Tj

FET Type :

P-Channel

Width :

3.9mm

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

-210mA

Transistor Type :

1 P-Channel

Manufacturer :

Microchip

Published :

2013

Turn On Delay Time :

10 ns

Base Product Number :

TP2640

Length :

4.9mm

Series :

--

Packaging :

Tape and Reel (TR)

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max :

740mW Ta

Rise Time :

15ns

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Number of Channels :

1