TN2640N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Drain to Source Breakdown Voltage :

400V

Radiation Hardening :

No

ECCN Code :

EAR99

Product Status :

Active

Continuous Drain Current (ID) :

220mA

Channel Type :

N

Transistor Element Material :

SILICON

Factory Lead Time :

2 Weeks

Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Mounting Style :

Through Hole

Packaging :

Bulk

Width :

4.19mm

Base Product Number :

TN2640

Power Dissipation-Max :

740mW Ta

Current - Continuous Drain (Id) @ 25°C :

220mA Tj

Turn-Off Delay Time :

20 ns

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD

Type :

FET

Drain to Source Voltage (Vdss) :

400V

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Turn On Delay Time :

4 ns

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Drain-source On Resistance-Max :

5Ohm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Bag

FET Feature :

--

Rise Time :

15ns

Number of Terminations :

3

Continuous Drain Current Id :

0.22

Brand :

Microchip Technology / Atmel

JESD-609 Code :

e3

Number of Elements :

1

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Product Category :

MOSFET

Supplier Device Package :

TO-92-3

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Weight :

453.59237mg

Vgs(th) (Max) @ Id :

2V @ 2mA

Fall Time (Typ) :

22 ns

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 25V

Maximum Operating Temperature :

+ 150 C

RoHS Status :

ROHS3 Compliant

RoHS :

Details

Vgs (Max) :

±20V

Series :

--

Drain Current-Max (Abs) (ID) :

0.22A

Mounting Type :

Through Hole

Power Dissipation (Max) :

740mW (Ta)

Power Dissipation :

740mW

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Height :

5.33mm

Terminal Position :

BOTTOM

Manufacturer :

Microchip

Length :

5.21mm