TN2640N3-G

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Mfr.Part #
TN2640N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 400V 220MA TO92-3
Stock
23,085
In Stock :
23,085

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Fall Time (Typ) :
22 ns
Mount :
Through Hole
JESD-609 Code :
e3
Factory Lead Time :
2 Weeks
Supplier Device Package :
TO-92-3
Rds On (Max) @ Id, Vgs :
5 Ω @ 500mA, 10V
Series :
--
Number of Pins :
3
Turn On Delay Time :
4 ns
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Power Dissipation-Max :
740mW Ta
Height :
5.33mm
Power Dissipation :
740mW
Configuration :
Single
Continuous Drain Current (ID) :
220mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
4.19mm
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
220mA Tj
Terminal Finish :
Matte Tin (Sn)
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Base Product Number :
TN2640
Drain-source On Resistance-Max :
5Ohm
Continuous Drain Current Id :
0.22
ECCN Code :
EAR99
Channel Type :
N
RoHS :
Details
Brand :
Microchip Technology / Atmel
Power Dissipation (Max) :
740mW (Ta)
Radiation Hardening :
No
Element Configuration :
Single
Length :
5.21mm
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
3
Transistor Polarity :
N-Channel
Additional Feature :
LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Drain to Source Breakdown Voltage :
400V
Number of Elements :
1
Type :
FET
Turn-Off Delay Time :
20 ns
FET Feature :
--
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Drain to Source Voltage (Vdss) :
400V
Package :
Bag
Rise Time :
15ns
Packaging :
Bulk
Mounting Style :
Through Hole
Drain Current-Max (Abs) (ID) :
0.22A
Transistor Application :
SWITCHING
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
Weight :
453.59237mg
Mounting Type :
Through Hole
FET Type :
N-Channel
Manufacturer :
Microchip
Maximum Operating Temperature :
+ 150 C
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
225pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
2V @ 2mA
Transistor Element Material :
SILICON
Number of Channels :
1
Terminal Position :
BOTTOM
Operating Mode :
ENHANCEMENT MODE
Published :
2013
Datasheets
TN2640N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2640N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Type:FET, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, TN2640N3-G pinout, TN2640N3-G datasheet PDF, TN2640N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2640N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2640N3-G


N-Channel Bulk 5 Ω @ 500mA, 10V ±20V 225pF @ 25V 400V TO-226-3, TO-92-3 (TO-226AA)

TN2640N3-G Overview


A device's maximal input capacitance is 225pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 220mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 400V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.22A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

TN2640N3-G Features


a continuous drain current (ID) of 220mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 20 ns
a 400V drain to source voltage (Vdss)


TN2640N3-G Applications


There are a lot of Microchip Technology
TN2640N3-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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