TN2640K4-G

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Mfr.Part #
TN2640K4-G
Manufacturer
Microchip Technology
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 400V 500MA TO252
Stock
11,846
In Stock :
11,846

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current Id :
500
Terminal Finish :
MATTE TIN
Vgs(th) (Max) @ Id :
2V @ 2mA
Product Category :
MOSFET
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
MSL :
MSL 3 - 168 hours
Height :
2.39mm
Published :
2013
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Terminations :
2
JESD-30 Code :
R-PSSO-G2
Product Status :
Active
Mounting Style :
SMD/SMT
Turn-Off Delay Time :
20 ns
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
1 N-Channel
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Gate to Source Voltage (Vgs) :
20V
Length :
6.73mm
FET Feature :
--
Power Dissipation-Max :
2.5W Ta
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Drain-source On Resistance-Max :
5Ohm
Power Dissipation (Max) :
2.5W (Ta)
Qualification :
-
Channel Type :
N Channel
Manufacturer :
Microchip
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
5 Ω @ 500mA, 10V
RoHS :
Details
Number of Elements :
1
JEDEC-95 Code :
TO-252AA
Qualification Status :
Not Qualified
Weight :
3.949996g
Input Capacitance (Ciss) (Max) @ Vds :
225pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
0.5A
Configuration :
Single
FET Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Brand :
Microchip Technology / Atmel
Fall Time (Typ) :
22 ns
Rise Time :
15ns
Drain to Source Voltage (Vdss) :
400V
Case Connection :
DRAIN
Series :
--
Number of Channels :
1
Supplier Device Package :
TO-252, (D-Pak)
JESD-609 Code :
e3
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Turn On Delay Time :
4 ns
Factory Lead Time :
7 Weeks
Vgs (Max) :
±20V
Product Type :
MOSFET
Additional Feature :
LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Base Product Number :
TN2640
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
2A
Width :
6.1mm
Element Configuration :
Single
Type :
FET
Channel Mode :
Enhancement
Drain to Source Breakdown Voltage :
400V
Minimum Operating Temperature :
- 55 C
RoHS Status :
ROHS3 Compliant
Power Dissipation :
2.5W
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2640K4-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Surface Mount, Type:FET, TN2640K4-G pinout, TN2640K4-G datasheet PDF, TN2640K4-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2640K4-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2640K4-G


N-Channel Tape & Reel (TR) 5 Ω @ 500mA, 10V ±20V 225pF @ 25V 400V TO-252-3, DPak (2 Leads + Tab), SC-63

TN2640K4-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 225pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

TN2640K4-G Features


a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 20 ns
a 400V drain to source voltage (Vdss)


TN2640K4-G Applications


There are a lot of Microchip Technology
TN2640K4-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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