TN2524N8-G
- Mfr.Part #
- TN2524N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 240V 360MA TO243AA
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-F3
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 10 ns
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 1.6W (Tc)
- MSL :
- MSL 1 - Unlimited
- Element Configuration :
- Single
- Package / Case :
- TO-243AA
- Product :
- MOSFET Small Signal
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- Flat
- Case Connection :
- DRAIN
- Number of Pins :
- 4
- Product Type :
- MOSFET
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Width :
- 2.6mm
- Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 240V
- Mount :
- Surface Mount
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- TO-243AA (SOT-89)
- Rise Time :
- 10ns
- Type :
- FET
- Continuous Drain Current Id :
- 360
- Weight :
- 52.786812mg
- Peak Reflow Temperature (Cel) :
- 260
- Drain-source On Resistance-Max :
- 6Ohm
- Turn-Off Delay Time :
- 20 ns
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 360mA Tj
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- -
- Brand :
- Microchip Technology
- Pulsed Drain Current-Max (IDM) :
- 2A
- Factory Lead Time :
- 6 Weeks
- Number of Terminations :
- 3
- Base Product Number :
- TN2524
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Length :
- 4.6mm
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Continuous Drain Current (ID) :
- 360mA
- Power Dissipation-Max :
- 1.6W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- Microchip
- Turn On Delay Time :
- 10 ns
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 500mA, 10V
- Height :
- 1.6mm
- Power Dissipation :
- 1.6W
- Transistor Polarity :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 240 V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Product Status :
- Active
- Series :
- -
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Mounting Style :
- SMD/SMT
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Type :
- 1 N-Channel
- Channel Type :
- N
- Drain Current-Max (Abs) (ID) :
- 0.36A
- Qualification :
- -
- Published :
- 2013
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Datasheets
- TN2524N8-G

N-Channel Tape & Reel (TR) 6 Ω @ 500mA, 10V ±20V 125pF @ 25V 240 V TO-243AA
TN2524N8-G Overview
A device's maximal input capacitance is 125pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 360mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 240V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.36A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 240 V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
TN2524N8-G Features
a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 240 V drain to source voltage (Vdss)
TN2524N8-G Applications
There are a lot of Microchip Technology
TN2524N8-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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