TN2524N8-G

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Mfr.Part #
TN2524N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 240V 360MA TO243AA
Stock
1
In Stock :
1

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-F3
ECCN Code :
EAR99
Fall Time (Typ) :
10 ns
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
40
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
JESD-609 Code :
e3
Transistor Element Material :
SILICON
RoHS :
Details
Channel Mode :
Enhancement
FET Type :
N-Channel
Power Dissipation (Max) :
1.6W (Tc)
MSL :
MSL 1 - Unlimited
Element Configuration :
Single
Package / Case :
TO-243AA
Product :
MOSFET Small Signal
Maximum Operating Temperature :
+ 150 C
Terminal Form :
Flat
Case Connection :
DRAIN
Number of Pins :
4
Product Type :
MOSFET
Additional Feature :
LOGIC LEVEL COMPATIBLE
Width :
2.6mm
Configuration :
Single
Drain to Source Breakdown Voltage :
240V
Mount :
Surface Mount
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Packaging :
Tape and Reel (TR)
Supplier Device Package :
TO-243AA (SOT-89)
Rise Time :
10ns
Type :
FET
Continuous Drain Current Id :
360
Weight :
52.786812mg
Peak Reflow Temperature (Cel) :
260
Drain-source On Resistance-Max :
6Ohm
Turn-Off Delay Time :
20 ns
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
360mA Tj
Minimum Operating Temperature :
- 55 C
FET Feature :
-
Brand :
Microchip Technology
Pulsed Drain Current-Max (IDM) :
2A
Factory Lead Time :
6 Weeks
Number of Terminations :
3
Base Product Number :
TN2524
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
Length :
4.6mm
Vgs(th) (Max) @ Id :
2V @ 1mA
Continuous Drain Current (ID) :
360mA
Power Dissipation-Max :
1.6W Tc
Gate to Source Voltage (Vgs) :
20V
Manufacturer :
Microchip
Turn On Delay Time :
10 ns
Rds On (Max) @ Id, Vgs :
6 Ω @ 500mA, 10V
Height :
1.6mm
Power Dissipation :
1.6W
Transistor Polarity :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
240 V
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Radiation Hardening :
No
Product Status :
Active
Series :
-
Contact Plating :
Tin
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Mounting Style :
SMD/SMT
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Transistor Type :
1 N-Channel
Channel Type :
N
Drain Current-Max (Abs) (ID) :
0.36A
Qualification :
-
Published :
2013
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Datasheets
TN2524N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2524N8-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Pins:4, Type:FET, Number of Channels:1, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, TN2524N8-G pinout, TN2524N8-G datasheet PDF, TN2524N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2524N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2524N8-G


N-Channel Tape & Reel (TR) 6 Ω @ 500mA, 10V ±20V 125pF @ 25V 240 V TO-243AA

TN2524N8-G Overview


A device's maximal input capacitance is 125pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 360mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 240V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.36A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 240 V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

TN2524N8-G Features


a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 240 V drain to source voltage (Vdss)


TN2524N8-G Applications


There are a lot of Microchip Technology
TN2524N8-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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