TN2524N8-G
- Mfr.Part #
- TN2524N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 240V 360MA TO243AA
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Type :
- 1 N-Channel
- MSL :
- MSL 1 - Unlimited
- Case Connection :
- DRAIN
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 500mA, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- -
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Qualification :
- -
- Drain-source On Resistance-Max :
- 6Ohm
- Drain to Source Breakdown Voltage :
- 240V
- Width :
- 2.6mm
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Rise Time :
- 10ns
- Current - Continuous Drain (Id) @ 25°C :
- 360mA Tj
- Mounting Type :
- Surface Mount
- Height :
- 1.6mm
- Channel Type :
- N
- Type :
- FET
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 1.6W Tc
- Turn On Delay Time :
- 10 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Type :
- N-Channel
- Manufacturer :
- Microchip
- JESD-30 Code :
- R-PSSO-F3
- Power Dissipation (Max) :
- 1.6W (Tc)
- Element Configuration :
- Single
- Power Dissipation :
- 1.6W
- Supplier Device Package :
- TO-243AA (SOT-89)
- Product Category :
- MOSFET
- Lead Free :
- Lead Free
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Configuration :
- Single
- Mounting Style :
- SMD/SMT
- Maximum Operating Temperature :
- + 150 C
- Product :
- MOSFET Small Signal
- Terminal Form :
- Flat
- Pulsed Drain Current-Max (IDM) :
- 2A
- Product Type :
- MOSFET
- Factory Lead Time :
- 6 Weeks
- Continuous Drain Current Id :
- 360
- Radiation Hardening :
- No
- Drain Current-Max (Abs) (ID) :
- 0.36A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 20 ns
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 10 ns
- Published :
- 2013
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Product Status :
- Active
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Number of Pins :
- 4
- Base Product Number :
- TN2524
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Weight :
- 52.786812mg
- Length :
- 4.6mm
- Series :
- -
- Continuous Drain Current (ID) :
- 360mA
- Vgs (Max) :
- ±20V
- Brand :
- Microchip Technology
- Drain to Source Voltage (Vdss) :
- 240 V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Datasheets
- TN2524N8-G

N-Channel Tape & Reel (TR) 6 Ω @ 500mA, 10V ±20V 125pF @ 25V 240 V TO-243AA
TN2524N8-G Overview
A device's maximal input capacitance is 125pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 360mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 240V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.36A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 240 V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
TN2524N8-G Features
a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 240 V drain to source voltage (Vdss)
TN2524N8-G Applications
There are a lot of Microchip Technology
TN2524N8-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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