TN2524N8-G

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Mfr.Part #
TN2524N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 240V 360MA TO243AA
Stock
1
In Stock :
1

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
MSL :
MSL 1 - Unlimited
Case Connection :
DRAIN
RoHS :
Details
Rds On (Max) @ Id, Vgs :
6 Ω @ 500mA, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
-
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Qualification :
-
Drain-source On Resistance-Max :
6Ohm
Drain to Source Breakdown Voltage :
240V
Width :
2.6mm
Additional Feature :
LOGIC LEVEL COMPATIBLE
Rise Time :
10ns
Current - Continuous Drain (Id) @ 25°C :
360mA Tj
Mounting Type :
Surface Mount
Height :
1.6mm
Channel Type :
N
Type :
FET
Transistor Element Material :
SILICON
Power Dissipation-Max :
1.6W Tc
Turn On Delay Time :
10 ns
Time@Peak Reflow Temperature-Max (s) :
40
FET Type :
N-Channel
Manufacturer :
Microchip
JESD-30 Code :
R-PSSO-F3
Power Dissipation (Max) :
1.6W (Tc)
Element Configuration :
Single
Power Dissipation :
1.6W
Supplier Device Package :
TO-243AA (SOT-89)
Product Category :
MOSFET
Lead Free :
Lead Free
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Vgs(th) (Max) @ Id :
2V @ 1mA
Configuration :
Single
Mounting Style :
SMD/SMT
Maximum Operating Temperature :
+ 150 C
Product :
MOSFET Small Signal
Terminal Form :
Flat
Pulsed Drain Current-Max (IDM) :
2A
Product Type :
MOSFET
Factory Lead Time :
6 Weeks
Continuous Drain Current Id :
360
Radiation Hardening :
No
Drain Current-Max (Abs) (ID) :
0.36A
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Turn-Off Delay Time :
20 ns
Minimum Operating Temperature :
- 55 C
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Fall Time (Typ) :
10 ns
Published :
2013
Package / Case :
TO-243AA
ECCN Code :
EAR99
Product Status :
Active
Transistor Polarity :
N-Channel
Number of Channels :
1
Contact Plating :
Tin
Number of Elements :
1
Number of Pins :
4
Base Product Number :
TN2524
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Weight :
52.786812mg
Length :
4.6mm
Series :
-
Continuous Drain Current (ID) :
360mA
Vgs (Max) :
±20V
Brand :
Microchip Technology
Drain to Source Voltage (Vdss) :
240 V
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Datasheets
TN2524N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2524N8-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Type:FET, Package / Case:TO-243AA, Number of Channels:1, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, TN2524N8-G pinout, TN2524N8-G datasheet PDF, TN2524N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2524N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2524N8-G


N-Channel Tape & Reel (TR) 6 Ω @ 500mA, 10V ±20V 125pF @ 25V 240 V TO-243AA

TN2524N8-G Overview


A device's maximal input capacitance is 125pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 360mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 240V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.36A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 240 V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

TN2524N8-G Features


a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 240 V drain to source voltage (Vdss)


TN2524N8-G Applications


There are a lot of Microchip Technology
TN2524N8-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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