TN2524N8-G
- Mfr.Part #
- TN2524N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 240V 360MA TO243AA
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Lead Free :
- Lead Free
- Width :
- 2.6mm
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 25V
- Channel Mode :
- Enhancement
- Height :
- 1.6mm
- Case Connection :
- DRAIN
- Product Status :
- Active
- Power Dissipation (Max) :
- 1.6W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 2A
- Rise Time :
- 10ns
- JESD-30 Code :
- R-PSSO-F3
- Continuous Drain Current Id :
- 360
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 360mA Tj
- Mounting Style :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 240V
- Transistor Type :
- 1 N-Channel
- Brand :
- Microchip Technology
- Terminal Form :
- Flat
- Weight :
- 52.786812mg
- Power Dissipation-Max :
- 1.6W Tc
- RoHS :
- Details
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Package / Case :
- TO-243AA
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- -
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 500mA, 10V
- Product Category :
- MOSFET
- Power Dissipation :
- 1.6W
- Minimum Operating Temperature :
- - 55 C
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 6Ohm
- Drain to Source Voltage (Vdss) :
- 240 V
- Product Type :
- MOSFET
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Factory Lead Time :
- 6 Weeks
- Product :
- MOSFET Small Signal
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Type :
- FET
- Number of Pins :
- 4
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Fall Time (Typ) :
- 10 ns
- Length :
- 4.6mm
- ECCN Code :
- EAR99
- Qualification :
- -
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- TO-243AA (SOT-89)
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Channel Type :
- N
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 360mA
- Turn On Delay Time :
- 10 ns
- Mount :
- Surface Mount
- Base Product Number :
- TN2524
- MSL :
- MSL 1 - Unlimited
- Manufacturer :
- Microchip
- Turn-Off Delay Time :
- 20 ns
- Series :
- -
- Drain Current-Max (Abs) (ID) :
- 0.36A
- Published :
- 2013
- Maximum Operating Temperature :
- + 150 C
- Datasheets
- TN2524N8-G

N-Channel Tape & Reel (TR) 6 Ω @ 500mA, 10V ±20V 125pF @ 25V 240 V TO-243AA
TN2524N8-G Overview
A device's maximal input capacitance is 125pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 360mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 240V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.36A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 240 V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
TN2524N8-G Features
a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 240 V drain to source voltage (Vdss)
TN2524N8-G Applications
There are a lot of Microchip Technology
TN2524N8-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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