TN2524N8-G

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Mfr.Part #
TN2524N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 240V 360MA TO243AA
Stock
1
In Stock :
1

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
40
Supplier Device Package :
TO-243AA (SOT-89)
Number of Channels :
1
Product Type :
MOSFET
Radiation Hardening :
No
Turn On Delay Time :
10 ns
Drain to Source Voltage (Vdss) :
240 V
Mount :
Surface Mount
Power Dissipation-Max :
1.6W Tc
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Factory Lead Time :
6 Weeks
Product Category :
MOSFET
Height :
1.6mm
Continuous Drain Current (ID) :
360mA
Transistor Application :
SWITCHING
Power Dissipation (Max) :
1.6W (Tc)
Number of Terminations :
3
Contact Plating :
Tin
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
2V @ 1mA
Rise Time :
10ns
Continuous Drain Current Id :
360
Channel Type :
N
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
10 ns
Published :
2013
Weight :
52.786812mg
Mounting Style :
SMD/SMT
Pulsed Drain Current-Max (IDM) :
2A
Element Configuration :
Single
Base Product Number :
TN2524
Lead Free :
Lead Free
FET Feature :
-
Peak Reflow Temperature (Cel) :
260
Type :
FET
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Product :
MOSFET Small Signal
Manufacturer :
Microchip
Package / Case :
TO-243AA
Drain Current-Max (Abs) (ID) :
0.36A
JESD-30 Code :
R-PSSO-F3
Series :
-
FET Type :
N-Channel
Terminal Form :
Flat
Power Dissipation :
1.6W
Additional Feature :
LOGIC LEVEL COMPATIBLE
Operating Temperature :
-55°C~150°C TJ
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Drain-source On Resistance-Max :
6Ohm
Turn-Off Delay Time :
20 ns
Transistor Polarity :
N-Channel
Product Status :
Active
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
4.6mm
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
4
Width :
2.6mm
Rds On (Max) @ Id, Vgs :
6 Ω @ 500mA, 10V
Transistor Element Material :
SILICON
RoHS :
Details
Case Connection :
DRAIN
Transistor Type :
1 N-Channel
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Configuration :
Single
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
360mA Tj
ECCN Code :
EAR99
Qualification :
-
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Drain to Source Breakdown Voltage :
240V
MSL :
MSL 1 - Unlimited
Maximum Operating Temperature :
+ 150 C
Brand :
Microchip Technology
Datasheets
TN2524N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2524N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Terminations:3, Type:FET, Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:4, TN2524N8-G pinout, TN2524N8-G datasheet PDF, TN2524N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2524N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2524N8-G


N-Channel Tape & Reel (TR) 6 Ω @ 500mA, 10V ±20V 125pF @ 25V 240 V TO-243AA

TN2524N8-G Overview


A device's maximal input capacitance is 125pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 360mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 240V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.36A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 240 V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

TN2524N8-G Features


a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 240 V drain to source voltage (Vdss)


TN2524N8-G Applications


There are a lot of Microchip Technology
TN2524N8-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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