TN2524N8-G

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Mfr.Part #
TN2524N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 240V 360MA TO243AA
Stock
1
In Stock :
1

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
2V @ 1mA
Lead Free :
Lead Free
Width :
2.6mm
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
125pF @ 25V
Channel Mode :
Enhancement
Height :
1.6mm
Case Connection :
DRAIN
Product Status :
Active
Power Dissipation (Max) :
1.6W (Tc)
Pulsed Drain Current-Max (IDM) :
2A
Rise Time :
10ns
JESD-30 Code :
R-PSSO-F3
Continuous Drain Current Id :
360
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
360mA Tj
Mounting Style :
SMD/SMT
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Drain to Source Breakdown Voltage :
240V
Transistor Type :
1 N-Channel
Brand :
Microchip Technology
Terminal Form :
Flat
Weight :
52.786812mg
Power Dissipation-Max :
1.6W Tc
RoHS :
Details
JESD-609 Code :
e3
FET Type :
N-Channel
Package / Case :
TO-243AA
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
FET Feature :
-
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
6 Ω @ 500mA, 10V
Product Category :
MOSFET
Power Dissipation :
1.6W
Minimum Operating Temperature :
- 55 C
Radiation Hardening :
No
Drain-source On Resistance-Max :
6Ohm
Drain to Source Voltage (Vdss) :
240 V
Product Type :
MOSFET
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
3
Factory Lead Time :
6 Weeks
Product :
MOSFET Small Signal
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Type :
FET
Number of Pins :
4
Additional Feature :
LOGIC LEVEL COMPATIBLE
Fall Time (Typ) :
10 ns
Length :
4.6mm
ECCN Code :
EAR99
Qualification :
-
Packaging :
Tape and Reel (TR)
Number of Channels :
1
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Supplier Device Package :
TO-243AA (SOT-89)
RoHS Status :
ROHS3 Compliant
Contact Plating :
Tin
Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
40
Channel Type :
N
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
360mA
Turn On Delay Time :
10 ns
Mount :
Surface Mount
Base Product Number :
TN2524
MSL :
MSL 1 - Unlimited
Manufacturer :
Microchip
Turn-Off Delay Time :
20 ns
Series :
-
Drain Current-Max (Abs) (ID) :
0.36A
Published :
2013
Maximum Operating Temperature :
+ 150 C
Datasheets
TN2524N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2524N8-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-243AA, Mounting Type:Surface Mount, Number of Terminations:3, Type:FET, Number of Pins:4, Number of Channels:1, TN2524N8-G pinout, TN2524N8-G datasheet PDF, TN2524N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2524N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2524N8-G


N-Channel Tape & Reel (TR) 6 Ω @ 500mA, 10V ±20V 125pF @ 25V 240 V TO-243AA

TN2524N8-G Overview


A device's maximal input capacitance is 125pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 360mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 240V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.36A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 240 V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

TN2524N8-G Features


a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a 240 V drain to source voltage (Vdss)


TN2524N8-G Applications


There are a lot of Microchip Technology
TN2524N8-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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